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savantic semiconductor product specification silicon pnp power transistors 2SA885 description with to-126 package complement to type 2sc1846 low collector-emitter saturation voltage applications for low-frequency power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -45 v v ceo collector-emitter voltage open base -35 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -1 a i cm collector current-peak -1.5 a 1.2* 1 p c collector power dissipation t c =25 5* 2 w t j junction temperature 150 t stg storage temperature -55~150 note) *1: without heat sink *2: with a 100 100 2 mm a1 heat sink
savantic semiconductor product specification 2 silicon pnp power transistors 2SA885 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-2ma;i b =0 -35 v v (br)cbo collector-base breakdown voltage i c =-10a ;i e =0 -45 v v cesat collector-emitter saturation voltage i c =-0.5a ;i b =-50ma -0.5 v i cbo collector cut-off current v cb =-20v; i e =0 -0.1 a i ceo collector cut-off current v ce =-20v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe-1 dc current gain i c =-0.5a ; v ce =-10v 85 340 h fe-2 dc current gain i c =-1a ; v ce =-5v 50 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 20 30 pf f t transition frequency i c =50ma ; v cb =-10v,f=200mhz 200 mhz h fe-1 classifications q r s 85-170 120-240 170-340 savantic semiconductor product specification 3 silicon pnp power transistors 2SA885 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2SA885 savantic semiconductor product specification 5 silicon pnp power transistors 2SA885 |
Price & Availability of 2SA885 |
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